IRFR3710ZTRLPBF vs IRFR024NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3710ZTRLPBF disebabkan oleh Infineon dan IRFR024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR3710ZTRLPBF IRFR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), HEXFET —
Drain to Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C (Tc) 42 A —
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 18 mOhm —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) 69 nC —
Power Dissipation (Pd) @ Tc=25C 140 W —
Avalanche Energy Rating (EAS) 150 mJ —
Maximum Junction Temperature 175 C —
Kemasan TO-252AA (DPAK), 3-pin (2+tab) TO-252-3 (DPAK, SC-63), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) —
Configuration Single with built-in diode —
Suhu Operasi -55 C to +175 C (TJ) —
Status RoHS Compliant (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
Jenis Transistor — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) — 60 A
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
Suhu Hubungan Operasi — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)
Aras MSL — 1 (per JEDEC J-STD-020)

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