IRFR5305TRLPBF vs IRF5305STRRPBF Perbandingan
Perbandingan bersamaan detil IRFR5305TRLPBF dari Infineon dan IRF5305STRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR5305TRLPBF | IRF5305STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 65 mΩ | — |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Suhu Hubung Kerja | -55C to +175C | -55C to +175C |
| Paket | TO-252AA (DPAK), surface mount | D2PAK (TO-263) Surface Mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (Advanced Process) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | Yes (Pb-free suffix) |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| Tipe Transistor | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| Packaging | — | Tape & Reel (TR) |
| Polarity | — | P-Channel |