IRFR540ZTRPBF vs IRFB3207ZPBF Perbandingan

Perbandingan bersamaan detil IRFR540ZTRPBF dari Infineon dan IRFB3207ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR540ZTRPBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 35 A (at Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) Max 28.5 mOhm at Vgs=10V —
Gate-Source Threshold Vgs(th) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) 39 nC —
Power Dissipation (Pd) 91 W (at Tc) —
Rentang Suhu Kerja -55 C to +175 C (junction) —
Paket TO-252AA (DPAK) surface mount TO-220AB (3-lead through-hole)
Technology IR MOSFET N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Tipe Mounting Surface Mount Through Hole
Jumlah Pin 3 (Gate, Drain, Source) —
Level MSL 1 (unlimited floor life at <30 C / 85% RH) N/A (through-hole)
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Automotive Qualified Yes (AEC-Q101) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubung Kerja — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon