IRFR5410TRPBF vs BSC060P03NS3EGATMA1 Perbandingan
Perbandingan bersamaan detil IRFR5410TRPBF dari Infineon dan BSC060P03NS3EGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRFR5410TRPBF | BSC060P03NS3EGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -30 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Paket | TO-252AA (DPAK), surface mount | PG-TDSON-8-1 (SuperSO8 5x6) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (TJ) | -55°C to +150°C |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | OptiMOS™ P-channel Trench |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Continuous Drain Current (Ta) | — | 17.7 A |
| Continuous Drain Current (Tc) | — | 100 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 6 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | -2.5 V |
| Total Gate Charge Qg @ VGS=10V | — | 81 nC |
| Input Capacitance Ciss | — | 6.02 nF |
| Output Capacitance Coss | — | 2.81 nF |
| Reverse Transfer Capacitance Crss | — | 220 pF |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 83 W |
| Status RoHS | — | Compliant |