IRFR5410TRPBF vs BSC060P03NS3EGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5410TRPBF sa pamamagitan ng Infineon at BSC060P03NS3EGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC060P03NS3EGATMA1 BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR5410TRPBF BSC060P03NS3EGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -30 V
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) typ 70 nC —
Packhaging TO-252AA (DPAK), surface mount PG-TDSON-8-1 (SuperSO8 5x6)
Power Dissition (PD) at TC = 25 °C 66 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (TJ) -55°C to +150°C
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) OptiMOS™ P-channel Trench
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) —
Level ng MSL [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
Continuous Drain Current (Ta) — 17.7 A
Continuous Drain Current (Tc) — 100 A
On-State Resistance RDS(on) max @ VGS=10V — 6 mΩ
Gate Threshold Voltage VGS(th) typ — -2.5 V
Total Gate Charge Qg @ VGS=10V — 81 nC
Input Capacitance Ciss — 6.02 nF
Output Capacitance Coss — 2.81 nF
Reverse Transfer Capacitance Crss — 220 pF
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 83 W
Tindminan RoHS — Compliant

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