IRFR9024NTRLPBF vs IRF7205TRPBF Perbandingan
Perbandingan bersamaan detil IRFR9024NTRLPBF dari Infineon dan IRF7205TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR9024NTRLPBF | IRF7205TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -11 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 175 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Power Dissipation (PD) at TC=25C | 38 W | — |
| Gate Charge (Qg) typical | 12.7 nC | — |
| Package Type | TO-252AA (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Drain, Gate, Source + Tab) | — |
| Technology | HEXFET (Generation 5) | IR HEXFET (4th generation) |
| Rentang Suhu Kerja | -55C to +175C | — |
| Lead-Free / RoHS | Yes (LPBF suffix) | — |
| Reel Orientation | Left (TRL suffix) | — |
| FET Type | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25°C | — | -4.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | — | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | 130 mΩ |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -3.0 V |
| Total Gate Charge Qg | — | 27 nC |
| Dissipasi Listrik (TC=25°C) | — | 2.5 W |
| Suhu Hubung Kerja | — | -55 °C to +150 °C |
| Paket | — | SO-8 (8-SO) |
| RoHS / Lead-Free | — | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | — | Tape & Reel (TR suffix) |