IRFR9024NTRLPBF vs IRF7205TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9024NTRLPBF sa pamamagitan ng Infineon at IRF7205TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR9024NTRLPBF IRF7205TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -11 A —
On-Resistance RDS(on) max at VGS=-10V 175 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Power Dissipation (PD) at TC=25C 38 W —
Gate Charge (Qg) typical 12.7 nC —
Package Type TO-252AA (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Drain, Gate, Source + Tab) —
Technology HEXFET (Generation 5) IR HEXFET (4th generation)
Hanay ng Temperature na Operasyon -55C to +175C —
Lead-Free / RoHS Yes (LPBF suffix) —
Reel Orientation Left (TRL suffix) —
FET Type — P-Channel MOSFET
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) at TA=25°C — -4.6 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V — 70 mΩ
On-Resistance RDS(on) max @ VGS=-4.5V — 130 mΩ
Gate Threshold Voltage VGS(th) — -1.0 V to -3.0 V
Total Gate Charge Qg — 27 nC
Pwersang Pinahihigpit (TC=25°C) — 2.5 W
Temperature ng Junction na Operasyon — -55 °C to +150 °C
Packhaging — SO-8 (8-SO)
RoHS / Lead-Free — Lead-Free (PBF suffix), RoHS compliant
Packaging — Tape & Reel (TR suffix)

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