IRFS3306PBF vs IRFS3306TRLPBF Perbandingan

Perbandingan bersamaan detil IRFS3306PBF dari Infineon dan IRFS3306TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS3306PBF IRFS3306TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) IR MOSFET™ (HEXFET-style planar stripe)
Drain-to-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 120 A (package limited) —
Continuous Drain Current (ID, silicon limited) 160 A —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] 2.0 V to 4.0 V (typical range)
On-Resistance RDS(on) max @ VGS=10V 4.2 mOhm —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
Total Gate Charge (Qg) typ 85 nC —
Gate-to-Drain Charge (Qgd) typ [DATA_NEEDED: Qgd nominal value] —
Power Dissipation (Pd) max @ Tc=25C 230 W —
Suhu Hubung Kerja -55C to +175C —
Paket D2PAK (TO-263AB) surface mount D2PAK (TO-263), surface mount
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Lead-Free / RoHS PbF (lead-free), RoHS compliant —
Continuous Drain Current (ID) @ Tc=25°C — 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) Max @ VGS=10V — 4.2 mΩ
Total Gate Charge (Qg) — 85 nC
Power Dissipation (PD) @ Tc=25°C — 230 W
Rentang Suhu Kerja — -55 °C to +175 °C (junction)
Lead-Free / Halogen-Free — Yes (PbF, Halogen-Free per Infineon datasheet)
Status RoHS — Compliant
Tape & Reel Packaging — 13-inch reel, 800 pcs/reel typical
Body Diode dV/dt Capability — Enhanced (per Infineon datasheet feature)

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