IRFS3306PBF vs IRFS3306TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS3306PBF disebabkan oleh Infineon dan IRFS3306TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFS3306PBF IRFS3306TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) IR MOSFET™ (HEXFET-style planar stripe)
Drain-to-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 120 A (package limited) —
Continuous Drain Current (ID, silicon limited) 160 A —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] 2.0 V to 4.0 V (typical range)
On-Resistance RDS(on) max @ VGS=10V 4.2 mOhm —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
Total Gate Charge (Qg) typ 85 nC —
Gate-to-Drain Charge (Qgd) typ [DATA_NEEDED: Qgd nominal value] —
Power Dissipation (Pd) max @ Tc=25C 230 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263AB) surface mount D2PAK (TO-263), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Lead-Free / RoHS PbF (lead-free), RoHS compliant —
Continuous Drain Current (ID) @ Tc=25°C — 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) Max @ VGS=10V — 4.2 mΩ
Total Gate Charge (Qg) — 85 nC
Power Dissipation (PD) @ Tc=25°C — 230 W
Gambaran Suhu Operasi — -55 °C to +175 °C (junction)
Lead-Free / Halogen-Free — Yes (PbF, Halogen-Free per Infineon datasheet)
Status RoHS — Compliant
Tape & Reel Packaging — 13-inch reel, 800 pcs/reel typical
Body Diode dV/dt Capability — Enhanced (per Infineon datasheet feature)

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