IRFS3306PBF vs IRFS3306TRLPBF 비교
다음의 상세 나란히 비교: IRFS3306PBF 제조: Infineon 및 IRFS3306TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFS3306PBF | IRFS3306TRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.28 | $1.12 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | IR MOSFET™ (HEXFET-style planar stripe) |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 120 A (package limited) | — |
| Continuous Drain Current (ID, silicon limited) | 160 A | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | 2.0 V to 4.0 V (typical range) |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| Total Gate Charge (Qg) typ | 85 nC | — |
| Gate-to-Drain Charge (Qgd) typ | [DATA_NEEDED: Qgd nominal value] | — |
| Power Dissipation (Pd) max @ Tc=25C | 230 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | D2PAK (TO-263AB) surface mount | D2PAK (TO-263), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| Lead-Free / RoHS | PbF (lead-free), RoHS compliant | — |
| Continuous Drain Current (ID) @ Tc=25°C | — | 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max @ VGS=10V | — | 4.2 mΩ |
| Total Gate Charge (Qg) | — | 85 nC |
| Power Dissipation (PD) @ Tc=25°C | — | 230 W |
| 동작 온도 범위 | — | -55 °C to +175 °C (junction) |
| Lead-Free / Halogen-Free | — | Yes (PbF, Halogen-Free per Infineon datasheet) |
| RoHS 상태 | — | Compliant |
| Tape & Reel Packaging | — | 13-inch reel, 800 pcs/reel typical |
| Body Diode dV/dt Capability | — | Enhanced (per Infineon datasheet feature) |