IRFZ24NPBF vs IRFZ34NPBF Perbandingan

Perbandingan bersamaan detil IRFZ24NPBF dari Infineon dan IRFZ34NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFZ24NPBF IRFZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) ± 20 V —
RDS(on) at VGS=10V 70 mOhm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 13.3 nC —
Power Dissipation (PD) at TC=25C 45 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-220AB (through hole) TO-220AB (3-pin + tab, through-hole)
Tipe Mounting Through Hole Through Hole
Technology HEXFET planar cell HEXFET (Planar DMOS, 5th generation)
Switching Frequency Range Optimized for < 100 kHz —
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) —
Qualification JEDEC standard JEDEC standard
Channel Mode Enhancement —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Status — Active
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
Rentang Suhu Kerja — -55 C to +175 C
Maximum Junction Temperature — 175 C
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Configuration — Single N-Channel, 3-pin (3+tab)

Spek dan Sumber

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