IRFZ24NPBF vs IRFZ34NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ24NPBF disebabkan oleh Infineon dan IRFZ34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ24NPBF IRFZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) ± 20 V —
RDS(on) at VGS=10V 70 mOhm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 13.3 nC —
Power Dissipation (PD) at TC=25C 45 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-220AB (through hole) TO-220AB (3-pin + tab, through-hole)
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET planar cell HEXFET (Planar DMOS, 5th generation)
Switching Frequency Range Optimized for < 100 kHz —
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) —
Qualification JEDEC standard JEDEC standard
Channel Mode Enhancement —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Status — Active
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
Gambaran Suhu Operasi — -55 C to +175 C
Maximum Junction Temperature — 175 C
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Configuration — Single N-Channel, 3-pin (3+tab)

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