IRFZ34NPBF vs IRFZ24NPBF Perbandingan

Perbandingan bersamaan detil IRFZ34NPBF dari Infineon dan IRFZ24NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFZ34NPBF IRFZ24NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Status Active —
FET Type N-Channel, Enhancement Mode N-Channel
Technology HEXFET (Planar DMOS, 5th generation) HEXFET planar cell
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
Rentang Suhu Kerja -55 C to +175 C —
Maximum Junction Temperature 175 C —
Paket TO-220AB (3-pin + tab, through-hole) TO-220AB (through hole)
Tipe Mounting Through Hole Through Hole
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard JEDEC standard
Status RoHS Compliant Compliant
Configuration Single N-Channel, 3-pin (3+tab) —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) — ± 20 V
RDS(on) at VGS=10V — 70 mOhm (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — 13.3 nC
Power Dissipation (PD) at TC=25C — 45 W
Suhu Hubung Kerja — -55C to +175C
Switching Frequency Range — Optimized for < 100 kHz
Lead-Free — Yes (PBF suffix)
Channel Mode — Enhancement

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