IRFZ34NPBF vs IRFZ24NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ34NPBF sa pamamagitan ng Infineon at IRFZ24NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFZ34NPBF | IRFZ24NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET planar cell |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | — |
| Maximum Junction Temperature | 175 C | — |
| Packhaging | TO-220AB (3-pin + tab, through-hole) | TO-220AB (through hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | JEDEC standard |
| Tindminan RoHS | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | 13.3 nC |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| Lead-Free | — | Yes (PBF suffix) |
| Channel Mode | — | Enhancement |