IRFZ34NPBF vs IRFZ24NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ34NPBF disebabkan oleh Infineon dan IRFZ24NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ34NPBF IRFZ24NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Status Active —
FET Type N-Channel, Enhancement Mode N-Channel
Technology HEXFET (Planar DMOS, 5th generation) HEXFET planar cell
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
Gambaran Suhu Operasi -55 C to +175 C —
Maximum Junction Temperature 175 C —
Kemasan TO-220AB (3-pin + tab, through-hole) TO-220AB (through hole)
Jenis Pemasangan Through Hole Through Hole
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard JEDEC standard
Status RoHS Compliant Compliant
Configuration Single N-Channel, 3-pin (3+tab) —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) — ± 20 V
RDS(on) at VGS=10V — 70 mOhm (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — 13.3 nC
Power Dissipation (PD) at TC=25C — 45 W
Suhu Hubungan Operasi — -55C to +175C
Switching Frequency Range — Optimized for < 100 kHz
Lead-Free — Yes (PBF suffix)
Channel Mode — Enhancement

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