IRFZ44NSTRLPBF vs IRFZ44NPBF Perbandingan
Perbandingan bersamaan detil IRFZ44NSTRLPBF dari Infineon dan IRFZ44NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ44NSTRLPBF | IRFZ44NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | 42 nC |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | D2PAK (TO-263) | TO-220AB (3-pin + tab) |
| Tipe Mounting | Surface Mount | Through Hole |
| Technology | HEXFET | HEXFET (Advanced Process) |
| Status RoHS | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |