IRFZ44NSTRLPBF vs IRFZ44NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ44NSTRLPBF disebabkan oleh Infineon dan IRFZ44NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFZ44NSTRLPBF | IRFZ44NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | 42 nC |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | D2PAK (TO-263) | TO-220AB (3-pin + tab) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Technology | HEXFET | HEXFET (Advanced Process) |
| Status RoHS | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |