IRFZ44NSTRLPBF vs IRFZ44NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ44NSTRLPBF tarafından Infineon ve IRFZ44NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ44NSTRLPBF | IRFZ44NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | 42 nC |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | D2PAK (TO-263) | TO-220AB (3-pin + tab) |
| Montaj Türü | Surface Mount | Through Hole |
| Technology | HEXFET | HEXFET (Advanced Process) |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 17.5 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 94 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 62 C/W |
| İşletim Jant Sıcaklığı | — | -55C to +175C |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS rating] |