IRFZ44NSTRLPBF vs IRFZ44NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NSTRLPBF sa pamamagitan ng Infineon at IRFZ44NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFZ44NSTRLPBF IRFZ44NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 49 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Drain-Source On-Resistance RDS(on) max 17.5 mOhm at VGS=10V —
Total Gate Charge (Qg) 42 nC 42 nC
Power Dissipation (TC) 94 W —
Power Dissipation (TA) 3.8 W —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging D2PAK (TO-263) TO-220AB (3-pin + tab)
Uri ng Pagpapasok Surface Mount Through Hole
Technology HEXFET HEXFET (Advanced Process)
Tindminan RoHS Compliant Compliant
Lead-Free (PBF suffix) Yes —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Temperature ng Junction na Operasyon — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

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