IRFZ48NSTRLPBF vs IRLB4030PBF Perbandingan
Perbandingan bersamaan detil IRFZ48NSTRLPBF dari Infineon dan IRLB4030PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ48NSTRLPBF | IRLB4030PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 54 nC | 87 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (Pd) @ Tc=25C | 130 W | — |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | D2PAK (TO-263) Surface Mount | TO-220AB |
| Tipe Mounting | Surface Mount | Through Hole |
| Packaging | Tape & Reel (13-inch reel, TRL) | — |
| Lead Finish | Lead-free (PBF) matte tin | — |
| Status RoHS | Compliant | Compliant |
| Technology Family | HEXFET advanced process technology | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at Tc | — | 370 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Technology | — | HEXFET (StrongIRFET family) |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |