IRL40S212ARMA1 vs BSC117N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil IRL40S212ARMA1 dari Infineon dan BSC117N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRL40S212ARMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD, Tc) | 231 W | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj max] | -55 C to +150 C (typical MOSFET junction) |
| Paket | PG-TO263-3 (D2PAK) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 5 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level MSL | 1 (unlimited) | 1 |
| Part Number | — | BSC117N08NS5ATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Jumlah Pin | — | 8 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |