IRL40S212ARMA1 vs BSC117N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL40S212ARMA1 disebabkan oleh Infineon dan BSC117N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRL40S212ARMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD, Tc) | 231 W | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj max] | -55 C to +150 C (typical MOSFET junction) |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 5 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Aras MSL | 1 (unlimited) | 1 |
| Part Number | — | BSC117N08NS5ATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Kiraan Pin | — | 8 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |