IRL40S212ARMA1 vs BSC117N08NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRL40S212ARMA1 sa pamamagitan ng Infineon at BSC117N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRL40S212ARMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD, Tc) | 231 W | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj max] | -55 C to +150 C (typical MOSFET junction) |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 5 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level ng MSL | 1 (unlimited) | 1 |
| Part Number | — | BSC117N08NS5ATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Bilang ng Pin | — | 8 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |