IRLML6346TRPBF vs IRLML5103TRPBF Perbandingan
Perbandingan bersamaan detil IRLML6346TRPBF dari Infineon dan IRLML5103TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML6346TRPBF | IRLML5103TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Paket | Micro3 / SOT-23 | Micro3/SOT-23 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR MOSFET |
| Level MSL | 1 | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Status RoHS | Compliant | Compliant |
| Tipe Transistor | — | P-Channel MOSFET |
| Maximum Drain-Source Voltage | — | 30 V |
| Continuous Drain Current | — | 760 mA at Ta |
| Power Dissipation | — | 540 mW at Ta |
| Maximum On-Resistance | — | 600 mOhm |
| Gate Charge | — | 3.4 nC |
| Drain-Source Voltage Rating | — | -30 V |
| Channel Mode | — | Enhancement |
| Suhu Kerja | — | 175 C |
| Footprint | — | SOT-23 |