IRLR024NTRPBF vs IRLR024NTRLPBF Perbandingan
Perbandingan bersamaan detil IRLR024NTRPBF dari Infineon dan IRLR024NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR024NTRPBF | IRLR024NTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 10 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55 °C to +175 °C (junction) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK), 3-pin (2 + tab), Surface Mount |
| Technology | HEXFET (Advanced Process Technology) | HEXFET (cellular N-channel MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mΩ |
| Gate Threshold Voltage VGS(th) | — | Logic-level (drive from 3.3V/5V logic) |
| Maximum Power Dissipation (PD) at TC=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 3.3 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 50 °C/W (PCB mount) |
| Avalanche Rating | — | Fully avalanche rated |
| Status RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |