IRLR3105TRPBF vs IRLR024NTRPBF Perbandingan

Perbandingan bersamaan detil IRLR3105TRPBF dari Infineon dan IRLR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR3105TRPBF IRLR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) HEXFET (Advanced Process Technology)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc 25 A —
Rds(on) max @ VGS=10V 37 mOhm —
Rds(on) max @ VGS=5V [DATA_NEEDED: Rds(on) at 5V] —
Total Gate Charge (Qg) 13.3 nC 10 nC (typical)
Gate-Source Voltage (VGS) max ±16 V —
Input Capacitance (Ciss) 710 pF @ 25 V —
Power Dissipation (Pd) at Tc 57 W —
Rentang Suhu Kerja [DATA_NEEDED: TJ min/max] -55 C to +175 C
Paket TO-252AA (DPAK, 2 leads + tab) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Gate Drive Type Logic-Level —
Status RoHS Compliant —
Packaging Tape & Reel (TRPBF) —
Supplier Device Package TO-252AA (DPAK) —
Drain-to-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V — 65 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.0 V
Power Dissipation (Pd) at Tc=25C — 45 W
Avalanche Rated — Yes (fully avalanche rated)
Gate Drive Level — Logic-Level
Lead-Free / RoHS — Lead-Free / RoHS Compliant
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

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