IRLR3114ZTRPBF vs IRL540NSTRLPBF Perbandingan

Perbandingan bersamaan detil IRLR3114ZTRPBF dari Infineon dan IRL540NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR3114ZTRPBF IRL540NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) —
Drain-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID, Tc=25 C) 42 A —
Continuous Drain Current (ID, Tc=100 C) 30 A —
Pulsed Drain Current (IDM) 130 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max 16 V ±16 V
Gate Threshold Voltage (VGS(th)) 2.5 V (typ) Logic-level
On-Resistance RDS(on) max @ VGS=10V 4.5 mOhm —
On-Resistance RDS(on) @ VGS=4.5V 4.9 mOhm —
Total Gate Charge (Qg) 40 nC @ VGS=4.5 V 49.3 nC
Input Capacitance (Ciss) 3.81 nF —
Power Dissipation (Pd, Tc=25 C) 140 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket TO-252AA (DPAK) surface mount TO-263 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + tab) —
Status RoHS Compliant Compliant (LPBF suffix indicates lead-free)
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25°C — 36 A
On-Resistance (RDS(on)) max @ VGS=10V — 44 mΩ
On-Resistance (RDS(on)) max @ VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Power Dissipation (PD) at Tc=25°C — 140 W
Power Dissipation (PD) at TA=25°C — 3.8 W
Rentang Suhu Kerja — -55°C to +175°C
Avalanche Energy Rated — Yes (single-pulse)
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon