IRLR3114ZTRPBF vs IRL540NSTRLPBF 比較
詳細並排比較 IRLR3114ZTRPBF 由 Infineon 與 IRL540NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR3114ZTRPBF | IRL540NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | 42 A | — |
| Continuous Drain Current (ID, Tc=100 C) | 30 A | — |
| Pulsed Drain Current (IDM) | 130 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | 16 V | ±16 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) | Logic-level |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm | — |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm | — |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V | 49.3 nC |
| Input Capacitance (Ciss) | 3.81 nF | — |
| Power Dissipation (Pd, Tc=25 C) | 140 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | TO-252AA (DPAK) surface mount | TO-263 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (2 + tab) | — |
| RoHS 狀態 | Compliant | Compliant (LPBF suffix indicates lead-free) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 44 mΩ |
| On-Resistance (RDS(on)) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Power Dissipation (PD) at Tc=25°C | — | 140 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| 工作溫度範圍 | — | -55°C to +175°C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |