IRLR3636TRLPBF vs IRLR3114ZTRPBF Perbandingan
Perbandingan bersamaan detil IRLR3636TRLPBF dari Infineon dan IRLR3114ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR3636TRLPBF | IRLR3114ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | IR HEXFET® (IR MOSFET™) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25°C) | 50 A | — |
| Continuous Drain Current (ID, TC=100°C) | 32 A [DATA_NEEDED: exact TC=100°C ID rating] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM rating] | 130 A |
| RDS(on) Max @ VGS=10V | 6.8 mΩ | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | 2.5 V (typ) |
| Total Gate Charge (QG) | 33 nC | — |
| Power Dissipation (PD, TC=25°C) | 143 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | — |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Avalanche Rated | Yes (per Infineon datasheet family) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 42 A |
| Continuous Drain Current (ID, Tc=100 C) | — | 30 A |
| Gate-Source Voltage (VGS) max | — | 16 V |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mOhm |
| On-Resistance RDS(on) @ VGS=4.5V | — | 4.9 mOhm |
| Total Gate Charge (Qg) | — | 40 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 3.81 nF |
| Power Dissipation (Pd, Tc=25 C) | — | 140 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Jumlah Pin | — | 3 (2 + tab) |
| Status RoHS | — | Compliant |