IRLR3636TRLPBF vs IRLR3114ZTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3636TRLPBF disebabkan oleh Infineon dan IRLR3114ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR3636TRLPBF | IRLR3114ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | IR HEXFET® (IR MOSFET™) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25°C) | 50 A | — |
| Continuous Drain Current (ID, TC=100°C) | 32 A [DATA_NEEDED: exact TC=100°C ID rating] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM rating] | 130 A |
| RDS(on) Max @ VGS=10V | 6.8 mΩ | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | 2.5 V (typ) |
| Total Gate Charge (QG) | 33 nC | — |
| Power Dissipation (PD, TC=25°C) | 143 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (TJ) | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Avalanche Rated | Yes (per Infineon datasheet family) | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 42 A |
| Continuous Drain Current (ID, Tc=100 C) | — | 30 A |
| Gate-Source Voltage (VGS) max | — | 16 V |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mOhm |
| On-Resistance RDS(on) @ VGS=4.5V | — | 4.9 mOhm |
| Total Gate Charge (Qg) | — | 40 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 3.81 nF |
| Power Dissipation (Pd, Tc=25 C) | — | 140 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Bilangan Pin | — | 3 (2 + tab) |
| Status RoHS | — | Compliant |