IRLR8726TRPBF vs IRLR8726TRLPBF Perbandingan

Perbandingan bersamaan detil IRLR8726TRPBF dari Infineon dan IRLR8726TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR8726TRPBF IRLR8726TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRLR8726TRPBF —
Technology StrongIRFET™ (HEXFET) —
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 30 V —
Continuous Drain Current (I_D) at T_C 86 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max 5.8 mΩ at V_GS = 10 V —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) min/max] —
Gate Charge Q_g (typ.) 15 nC —
Power Dissipation P_D 75 W at T_C —
Suhu Hubung Kerja -55C to +175C -55C to +175C
Paket TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant —
Bebas Halogen Yes —
Level MSL 1 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC=25C — 86 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max at VGS=10V — 5.8 mOhm
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — 15 nC
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Maximum Power Dissipation (PD) at TC=25C — 75 W
Technology Family — StrongIRFET
RoHS Compliance — ROHS3 Compliant
Lead-Free — Yes (PBF suffix)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon