IRS2101STRPBF vs IR2104SPBF Perbandingan

Perbandingan bersamaan detil IRS2101STRPBF dari Infineon dan IR2104SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2101STRPBF IR2104SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type High-Side, Low-Side (Half-Bridge) —
Number of Drivers 2 2 (high-side + low-side)
Jumlah Output 2-OUT —
Konfigurasi Output Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V, 5 V, 15 V CMOS/LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) Yes (VCC UVLO)
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
Suhu Kerja -40C to +125C —
Paket 8-SOIC (SOIC-8) 8-pin SOIC
Tipe Mounting Surface Mount —
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
Status RoHS Compliant (PBF suffix) Compliant (PBF suffix indicates lead-free)
Fungsi — Half-bridge gate driver
Configuration — High and Low Side
Input Type — Logic (non-inverting)
Maximum Offset / Bootstrap Supply Voltage — 600 V
Gate Drive Supply Range (VCC) — 10 V to 20 V
Output Source Current — 130 mA typical
Output Sink Current — 270 mA typical
Propagation Delay — 680 ns typical
Waktu naik — 160 ns typical
Waktu Menurun — 60 ns typical
Deadtime — Internally set
Cross-Conduction Prevention — Yes
Rentang Suhu Kerja — -40 C to +125 C

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