IRS2153DPBF vs IRS2153DSPBF Perbandingan

Perbandingan bersamaan detil IRS2153DPBF dari Infineon dan IRS2153DSPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2153DPBF IRS2153DSPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup NRND Aktif
Product Type Half-Bridge Gate Driver IC —
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Topologi Self-Oscillating (RC-timed) —
Jumlah Output 2 (High-Side, Low-Side) 2 (HO, LO)
Offset Voltage (High-Side) 600 V (max) —
Output Current (Source, typ) 0.18 A —
Output Current (Sink, typ) 0.26 A —
Internal Oscillator Frequency [DATA_NEEDED: oscillator frequency range] —
Dead Time (typ) 0.5 us —
Half-Bridge Driver Propagation (typ) 1.1 us —
Bootstrap FET Integrated —
VCC Supply Voltage [DATA_NEEDED: VCC range] 10 V to 20 V
Supply Current (VCC, typ) 0.5 mA —
Shutdown Input Yes (programmable) —
Suhu Hubung Kerja -40C to +125C —
Paket 8-Pin PDIP (through-hole) 8-SOIC (SOIC-8)
Level MSL MSL2 / MSL3 (per Infineon datasheet family note) —
Qualification Level Industrial —
Status RoHS Compliant (Pb-free suffix) —
Fungsi — Half-bridge gate driver with RC input oscillator
Configuration — High-side + low-side driver, half-bridge
Maximum Offset Voltage (Voffset) — 600 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
Suhu Kerja — -40 C to +125 C
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)
Technology — HVIC + latch-immune CMOS
Tipe Mounting — Surface Mount

Spek dan Sumber

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