IRS21814MTRPBF vs IR2110SPBF Perbandingan

Perbandingan bersamaan detil IRS21814MTRPBF dari Infineon dan IR2110SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS21814MTRPBF IR2110SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High and Low Side, Independent —
Driver Channels 2 (half-bridge) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (bootstrap) —
Offset Voltage (High-Side) Up to +600 V —
Peak Source Current (typ.) 1.9 A —
Peak Sink Current (typ.) 2.3 A —
Logic Input Compatibility 3.3 V and 5 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Propagation Delay (typ.) 180 ns —
Delay Matching (HS to LS) [DATA_NEEDED: HS-LS delay matching spec] —
Undervoltage Lockout Yes (VCC and VBS) —
dV/dt Immunity Yes (negative-transient tolerant) —
Paket 16-MLPQ (4x4 mm) with Exposed Pad 16-pin SOIC (SO-16, DW suffix)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40C to +125C —
Packaging Tape & Reel —
Status RoHS Compliant —
Fungsi — Half-bridge gate driver
Topologi — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Rentang Suhu Kerja — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

Spek dan Sumber

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