IRS21814MTRPBF vs IR2110SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRS21814MTRPBF disebabkan oleh Infineon dan IR2110SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRS21814MTRPBF IR2110SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High and Low Side, Independent —
Driver Channels 2 (half-bridge) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (bootstrap) —
Offset Voltage (High-Side) Up to +600 V —
Peak Source Current (typ.) 1.9 A —
Peak Sink Current (typ.) 2.3 A —
Logic Input Compatibility 3.3 V and 5 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Propagation Delay (typ.) 180 ns —
Delay Matching (HS to LS) [DATA_NEEDED: HS-LS delay matching spec] —
Undervoltage Lockout Yes (VCC and VBS) —
dV/dt Immunity Yes (negative-transient tolerant) —
Kemasan 16-MLPQ (4x4 mm) with Exposed Pad 16-pin SOIC (SO-16, DW suffix)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40C to +125C —
Packaging Tape & Reel —
Status RoHS Compliant —
Fungsi — Half-bridge gate driver
Tetstruktur — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Gambaran Suhu Operasi — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

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