ISC011N06LM5ATMA1 vs IAUZ40N06S5N050ATMA1 Perbandingan
Perbandingan bersamaan detil ISC011N06LM5ATMA1 dari Infineon dan IAUZ40N06S5N050ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC011N06LM5ATMA1 | IAUZ40N06S5N050ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 (Trench) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Paket | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSDSON-8-33 (3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | 8 |
| Rentang Suhu Kerja | -55C to +175C | -55C to +175C |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Continuous Drain Current (ID, TC) | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on), typ) | — | 5 mΩ at VGS=10 V |
| Maximum Power Dissipation (PD) | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| Channel Type | — | N-Channel Enhancement Mode |
| Thermal Resistance (RthJC, max) | — | [DATA_NEEDED: RthJC] |
| Automotive Qualification | — | AEC-Q101 Qualified |
| Packaging | — | Tape & Reel |