ISC011N06LM5ATMA1 vs IAUZ40N06S5N050ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N06LM5ATMA1 disebabkan oleh Infineon dan IAUZ40N06S5N050ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC011N06LM5ATMA1 IAUZ40N06S5N050ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 OptiMOS 5 (Trench)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Kemasan PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TSDSON-8-33 (3.3 x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Gambaran Suhu Operasi -55C to +175C -55C to +175C
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] 1
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Continuous Drain Current (ID, TC) — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on), typ) — 5 mΩ at VGS=10 V
Maximum Power Dissipation (PD) — 71 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th), typ) — 1.7 V
Channel Type — N-Channel Enhancement Mode
Thermal Resistance (RthJC, max) — [DATA_NEEDED: RthJC]
Automotive Qualification — AEC-Q101 Qualified
Packaging — Tape & Reel

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga