ISC015N06NM5LF2ATMA1 vs ISC060N06NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N06NM5LF2ATMA1 dari Infineon dan ISC060N06NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC015N06NM5LF2ATMA1 ISC060N06NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 Linear FET 2 (N-Channel) OptiMOS 6 (60V generation)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 32 A 15.2 A
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 217 W 50 W
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V [DATA_NEEDED: VGS(th) typ/min/max]
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC [DATA_NEEDED: Qg typ/nC]
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8 FL (5x6 mm) PG-TDSON-8 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
RoHS Compliant —
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 62 A
Configuration — Single N-Channel
Rentang Suhu Kerja — -55C to +175C (junction, per OptiMOS 6 family)
Gate Drive — Standard gate drive (10 V VGS recommended for full RDS(on))
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: MSL level]
On-State Resistance RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max in mohm]

Spek dan Sumber

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