ISC015N06NM5LF2ATMA1 vs ISC060N06NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5LF2ATMA1 disebabkan oleh Infineon dan ISC060N06NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N06NM5LF2ATMA1 ISC060N06NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 Linear FET 2 (N-Channel) OptiMOS 6 (60V generation)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 32 A 15.2 A
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 217 W 50 W
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V [DATA_NEEDED: VGS(th) typ/min/max]
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC [DATA_NEEDED: Qg typ/nC]
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8 FL (5x6 mm) PG-TDSON-8 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
RoHS Compliant —
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 62 A
Configuration — Single N-Channel
Gambaran Suhu Operasi — -55C to +175C (junction, per OptiMOS 6 family)
Gate Drive — Standard gate drive (10 V VGS recommended for full RDS(on))
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL level]
On-State Resistance RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max in mohm]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga