ISC028N03LF2SATMA1 vs BSC340N08NS3GATMA1 Perbandingan
Perbandingan bersamaan detil ISC028N03LF2SATMA1 dari Infineon dan BSC340N08NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC028N03LF2SATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 92 A |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | RoHS compliant, lead-free |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Part Number | — | BSC340N08NS3GATMA1 |
| Technology | — | OptiMOS 3 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 23 A |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Rentang Suhu Kerja | — | -55C to +150C |
| Channel Type | — | Single N-Channel |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |