ISC080N10NM6ATMA1 vs BSC117N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC080N10NM6ATMA1 dari Infineon dan BSC117N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC080N10NM6ATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | [DATA_NEEDED: VGS(th) value] |
| Paket | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55°C to +175°C (TJ max, per datasheet) | -55 C to +150 C (typical MOSFET junction) |
| Level MSL | 1 (per JEDEC J-STD-020, per datasheet) | 1 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| Technology | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Jumlah Pin | — | 8 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |