ISC080N10NM6ATMA1 vs BSC117N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC080N10NM6ATMA1 disebabkan oleh Infineon dan BSC117N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC080N10NM6ATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | [DATA_NEEDED: VGS(th) value] |
| Kemasan | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ max, per datasheet) | -55 C to +150 C (typical MOSFET junction) |
| Aras MSL | 1 (per JEDEC J-STD-020, per datasheet) | 1 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| Technology | — | OptiMOS 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Kiraan Pin | — | 8 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |