ISC080N10NM6ATMA1 vs BSC117N08NS5ATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveInfineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC080N10NM6ATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 6 100V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Ta | 13 A | β |
| Continuous Drain Current (ID) at Tc | 75 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 Β΅A | [DATA_NEEDED: VGS(th) value] |
| Package | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max, per datasheet) | -55 C to +150 C (typical MOSFET junction) |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | β |
| Part Number | β | BSC117N08NS5ATMA1 |
| Technology | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Continuous Drain Current (ID) max | β | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | β | 11.7 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 50 W |
| Pin Count | β | 8 |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |