ISC080N10NM6ATMA1 vs IAUC120N06S5L011ATMA1 Perbandingan

Perbandingan bersamaan detil ISC080N10NM6ATMA1 dari Infineon dan IAUC120N06S5L011ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC080N10NM6ATMA1 IAUC120N06S5L011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V OptiMOS 5 60 V (S5 generation)
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Paket PG-TDSON-8 FL (TDSON EP) PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +175°C (TJ max, per datasheet) —
Level MSL 1 (per JEDEC J-STD-020, per datasheet) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Bebas Halogen Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Drain-Source Voltage (V_DS) — 60 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) — 310 A (Tj), 120 A marketing
R_DS(on) max — [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) — 188 W at T_C = 25 °C
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Avalanche Energy Rated — Yes (EAS)

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IAUC120N06S5L011ATMA1

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