ISC080N10NM6ATMA1 vs IAUC120N06S5L011ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC080N10NM6ATMA1 disebabkan oleh Infineon dan IAUC120N06S5L011ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC080N10NM6ATMA1 IAUC120N06S5L011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V OptiMOS 5 60 V (S5 generation)
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Kemasan PG-TDSON-8 FL (TDSON EP) PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ max, per datasheet) —
Aras MSL 1 (per JEDEC J-STD-020, per datasheet) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Drain-Source Voltage (V_DS) — 60 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) — 310 A (Tj), 120 A marketing
R_DS(on) max — [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) — 188 W at T_C = 25 °C
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Avalanche Energy Rated — Yes (EAS)

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