ISC080N10NM6ATMA1 vs IAUC120N06S5L011ATMA1 Comparison

Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and IAUC120N06S5L011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC080N10NM6ATMA1 IAUC120N06S5L011ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V OptiMOS 5 60 V (S5 generation)
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Package PG-TDSON-8 FL (TDSON EP) PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +175°C (TJ max, per datasheet) —
MSL Level 1 (per JEDEC J-STD-020, per datasheet) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free Yes —
Halogen Free Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Drain-Source Voltage (V_DS) — 60 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) — 310 A (Tj), 120 A marketing
R_DS(on) max — [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) — 188 W at T_C = 25 °C
Operating Junction Temperature — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Avalanche Energy Rated — Yes (EAS)

Datasheets & Resources

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