ISC080N10NM6ATMA1 vs IAUC120N06S5L011ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC080N10NM6ATMA1 sa pamamagitan ng Infineon at IAUC120N06S5L011ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 ✓ NakahandaInfineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC080N10NM6ATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| Packhaging | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ max, per datasheet) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020, per datasheet) | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | — | 310 A (Tj), 120 A marketing |
| R_DS(on) max | — | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | — | 188 W at T_C = 25 °C |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Energy Rated | — | Yes (EAS) |