ISC080N10NM6ATMA1 vs ISC015N04NM5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC080N10NM6ATMA1 dari Infineon dan ISC015N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC080N10NM6ATMA1 ISC015N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA 3.4 V (typ)
Paket PG-TDSON-8 FL (TDSON EP) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +175°C (TJ max, per datasheet) -55 C to +175 C (junction, per OptiMOS 5)
Level MSL 1 (per JEDEC J-STD-020, per datasheet) 1 (per Infineon SuperSO8 family)
Status RoHS Compliant Compliant
Lead-Free Yes —
Bebas Halogen Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
Technology — OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Paket / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jumlah Pin — 8
Drive Level — Normal Level (VGS(th) ~3.4 V)

Spek dan Sumber

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