ISC080N10NM6ATMA1 vs ISC015N04NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC080N10NM6ATMA1 disebabkan oleh Infineon dan ISC015N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC080N10NM6ATMA1 ISC015N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA 3.4 V (typ)
Kemasan PG-TDSON-8 FL (TDSON EP) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ max, per datasheet) -55 C to +175 C (junction, per OptiMOS 5)
Aras MSL 1 (per JEDEC J-STD-020, per datasheet) 1 (per Infineon SuperSO8 family)
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
Technology — OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Kemasan / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Kiraan Pin — 8
Drive Level — Normal Level (VGS(th) ~3.4 V)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga