ISC300N20NM6ATMA1 vs IQDH35N03LM5SCATMA1 Perbandingan
Perbandingan bersamaan detil ISC300N20NM6ATMA1 dari Infineon dan IQDH35N03LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
ISC300N20NM6ATMA1 ✓ AktifInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC300N20NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 200V | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 44 A | — |
| Continuous Drain Current (ID) at Ta | 6.5 A | 66 A |
| Power Dissipation (PD) at TC | 136 W | — |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Paket | PG-TDSON-8 | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | OptiMOS 5 (trench, shielded-gate) |
| Operating Mode | Enhancement | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Tc | — | 278 W |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Level MSL | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |